Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. Issue 23 (16th June 2022)

• Record Type: Journal Article
• Authors: Shen, Chengxu; Yin, Zhigang; Collins, Fionn; Pinna, Nicola
• Is Part Of: Advanced science. Volume 9:Issue 23(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-06-16
• Subjects: atomic layer deposition -- electronics -- metal chalcogenides -- metal oxides -- transistors; Science -- Periodicals; 505
• DOI: 10.1002/advs.202104599
• Languages: English
• ISSNs: 2198-3844

Abstract

Abstract: Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high‐performance field‐effect transistors. By ALD various n‐type and p‐type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge‐transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure–property relations can be proposed, which can help to design better‐performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications. Abstract : Atomic layer deposition (ALD) has enabled the development of high‐quality thin film materials in transistors. This review covers recent advances in ALD of metal oxides and chalcogenides with tunable bandgaps, compositions and nanostructures for high‐performance transistor applications. These ALD‐materials show promise as semiconductor channels, transparent electrodes/interlayers, dielectrics, and protecting/encapsulating layers for improving charge transport, switching properties and device stability.