Diamond Nanowire Transistor with High Current Capability. Issue 6 (19th January 2022)

• Record Type: Journal Article
• Authors: Pakpour-Tabrizi, Alexander C.; Yosinski, Shari; Jennings-Moors, Ralph; Kobos, Zachary A.; Sawtelle, Sonya D.; Reed, Mark A.; Jackman, Richard B.
• Is Part Of: Physica status solidi. Volume 219:Issue 6(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-01-19
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202100622
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Carrier confinement in nanowire (NW) structures can offer a host of new material properties compared to bulk electronic devices. Diamond can be considered an ultimate semiconductor given its superlative electronic, physical, and optical properties. However, the development of diamond device technology has been hindered by doping problems in conventional device structures. Here, heavily doped diamond NWs, some 15 nm wide and only 1–2 nm deep overcome these issues and offer a significant advance in NW technology; transistor action can be induced with remote side gates alone, without the need for semiconductor junctions. Quasi‐ballistic transport is most‐likely responsible for extraordinary current handling capability of the NW transistors fabricated here at some 20 MA cm −2, being around 0.04 G0. This unipolar technology opens up a new paradigm in diamond nanoelectronic device technology. Abstract : Lateral p‐type diamond nanowires (NWs) are realized that display extraordinary levels of electrical conduction at room temperature. The conductance value can be calculated as 0.04 G0 . This is most likely attributable to a form of field‐induced quasi‐ballistic carrier transport within the NW induced by the field applied via the side gates.