Cite
HARVARD Citation
Bose, R. et al. (2022). Three-Dimensional Channel Potential Model of a Triple Gate MOSFET based on Conformal Mapping Technique. IETE technical review. 39 (3), pp. 725-733. [Online].
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Bose, R. et al. (2022). Three-Dimensional Channel Potential Model of a Triple Gate MOSFET based on Conformal Mapping Technique. IETE technical review. 39 (3), pp. 725-733. [Online].