Cite
HARVARD Citation
Pan, S. et al. (2022). Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy. Semiconductor science and technology. p. . [Online].
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Pan, S. et al. (2022). Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy. Semiconductor science and technology. p. . [Online].