DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity. (5th October 2022)
- Record Type:
- Journal Article
- Title:
- DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity. (5th October 2022)
- Main Title:
- DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity
- Authors:
- Mao, Ge-Qi
Yan, Zhao-Yi
Xue, Kan-Hao
Ai, Zhengwei
Yang, Shengxin
Cui, Hanli
Yuan, Jun-Hui
Ren, Tian-Ling
Miao, Xiangshui - Abstract:
- Abstract: It is known that the Kohn–Sham eigenvalues do not characterize experimental excitation energies directly, and the band gap of a semiconductor is typically underestimated by local density approximation (LDA) of density functional theory (DFT). An embarrassing situation is that one usually uses LDA+ U for strongly correlated materials with rectified band gaps, but for non-strongly-correlated semiconductors one has to resort to expensive methods like hybrid functionals or GW . In spite of the state-of-the-art meta-generalized gradient approximation functionals like TB-mBJ and SCAN, methods with LDA-level complexity to rectify the semiconductor band gaps are in high demand. DFT-1/2 stands as a feasible approach and has been more widely used in recent years. In this work we give a detailed derivation of the Slater half occupation technique, and review the assumptions made by DFT-1/2 in semiconductor band structure calculations. In particular, the self-energy potential approach is verified through mathematical derivations. The aims, features and principles of shell DFT-1/2 for covalent semiconductors are also accounted for in great detail. Other developments of DFT-1/2 including conduction band correction, DFT+ A -1/2, empirical formula for the self-energy potential cutoff radius, etc, are further reviewed. The relations of DFT-1/2 to hybrid functional, sX-LDA, GW, self-interaction correction, scissor's operator as well as DFT+ U are explained. Applications, issues andAbstract: It is known that the Kohn–Sham eigenvalues do not characterize experimental excitation energies directly, and the band gap of a semiconductor is typically underestimated by local density approximation (LDA) of density functional theory (DFT). An embarrassing situation is that one usually uses LDA+ U for strongly correlated materials with rectified band gaps, but for non-strongly-correlated semiconductors one has to resort to expensive methods like hybrid functionals or GW . In spite of the state-of-the-art meta-generalized gradient approximation functionals like TB-mBJ and SCAN, methods with LDA-level complexity to rectify the semiconductor band gaps are in high demand. DFT-1/2 stands as a feasible approach and has been more widely used in recent years. In this work we give a detailed derivation of the Slater half occupation technique, and review the assumptions made by DFT-1/2 in semiconductor band structure calculations. In particular, the self-energy potential approach is verified through mathematical derivations. The aims, features and principles of shell DFT-1/2 for covalent semiconductors are also accounted for in great detail. Other developments of DFT-1/2 including conduction band correction, DFT+ A -1/2, empirical formula for the self-energy potential cutoff radius, etc, are further reviewed. The relations of DFT-1/2 to hybrid functional, sX-LDA, GW, self-interaction correction, scissor's operator as well as DFT+ U are explained. Applications, issues and limitations of DFT-1/2 are comprehensively included in this review. … (more)
- Is Part Of:
- Journal of physics. Volume 34:Number 40(2022)
- Journal:
- Journal of physics
- Issue:
- Volume 34:Number 40(2022)
- Issue Display:
- Volume 34, Issue 40 (2022)
- Year:
- 2022
- Volume:
- 34
- Issue:
- 40
- Issue Sort Value:
- 2022-0034-0040-0000
- Page Start:
- Page End:
- Publication Date:
- 2022-10-05
- Subjects:
- DFT-1/2 -- shell DFT-1/2 -- band gap -- semiconductor -- electronic structure calculation -- density functional theory -- self-energy correction
Condensed matter -- Periodicals
Matière condensée -- Périodiques
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530.4105 - Journal URLs:
- http://www.iop.org/Journals/cm ↗
http://iopscience.iop.org/0953-8984/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-648X/ac829d ↗
- Languages:
- English
- ISSNs:
- 0953-8984
- Deposit Type:
- Legaldeposit
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