Solution‐Processed Stretchable Ag2S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory. Issue 23 (30th April 2021)

• Record Type: Journal Article
• Authors: Jo, Seungki; Cho, Soyoung; Yang, U Jeong; Hwang, Gyeong‐Seok; Baek, Seongheon; Kim, Si‐Hoon; Heo, Seung Hwae; Kim, Ju‐Young; Choi, Moon Kee; Son, Jae Sung
• Is Part Of: Advanced materials. Volume 33:Issue 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-04-30
• Subjects: Ag 2S -- healthcare monitoring -- resistive switching -- solution processing -- stretchable devices -- stretchable semiconductors -- thin films; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202100066
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Compared with the large plastic deformation observed in ductile metals and organic materials, inorganic semiconductors have limited plasticity (<0.2%) due to their intrinsic bonding characters, restricting their widespread applications in stretchable electronics. Herein, the solution‐processed synthesis of ductile α‐Ag2 S thin films and fabrication of all‐inorganic, self‐powered, and stretchable memory devices, is reported. Molecular Ag2 S complex solution is synthesized by chemical reduction of Ag2 S powder, fabricating wafer‐scale highly crystalline Ag2 S thin films. The thin films show stretchability due to the intrinsic ductility, sustaining the structural integrity at a tensile strain of 14.9%. Moreover, the fabricated Ag2 S‐based resistive random access memory presents outstanding bipolar switching characteristics ( I on / I off ratio of ≈10 5, operational endurance of 100 cycles, and retention time >10 6 s) as well as excellent mechanical stretchability (no degradation of properties up to stretchability of 52%). Meanwhile, the device is highly durable under diverse chemical environments and temperatures from −196 to 300 °C, especially maintaining the properties for 168 h in 85% relative humidity and 85 °C. A self‐powered memory combined with motion sensors for use as a wearable healthcare monitoring system is demonstrated, offering the potential for designing high‐performance wearable electronics that are usable in daily life in a real‐world setting. Abstract : Solution‐processed synthesis of intrinsically stretchable Ag2 S thin films for fabrication of self‐powered stretchable resistive memory devices is presented. The device exhibits excellent switching characteristics and mechanical stretchability (52%), and extremely high thermal and environmental durability (168 h in 85 °C/85% relative humidity). A self‐powered memory combined with motion sensors for use as a wearable healthcare monitoring system is demonstrated.