Design and parametric optimization of ion-implanted PERC solar cells to achieve 22.8% efficiency: a process and device simulation study. Issue 13 (14th June 2022)

• Record Type: Journal Article
• Authors: Kashyap, Savita; Madan, Jaya; Pandey, Rahul
• Is Part Of: Sustainable energy & fuels. Volume 6:Issue 13(2022)
• Page Start: 3249
• Page End: 3262
• Publication Date: 2022-06-14
• Subjects: Renewable energy sources -- Periodicals; Fuel cells -- Periodicals; Electric batteries -- Periodicals; Electrochemistry -- Periodicals; 660.297
• DOI: 10.1039/d2se00434h
• Languages: English
• ISSNs: 2398-4902

Abstract

Abstract : 22.8% efficient ion-implanted PERC solar cells are designed using industry-standard process/device simulators. The collective impact of ion implantation dose and energy on PV parameters have been investigated to optimize emitter region performance. Abstract : Silicon-based photovoltaic (PV) technology is considered the most favourable approach, and has received great consideration worldwide, to possibly meet the ever-growing need for energy. Silicon-passivated emitter and rear cells (PERCs) are promising contenders for mass production in the PV industry. However, PERC devices suffer from losses that limit the device performance. Recombination of minority carriers and absorption losses in PV devices are major limiting factors that restrain the achievable values of power conversion efficiency (PCE). In an attempt to circumvent these losses and enhance PCE, regular upright pyramid surface textured ion-implanted PERC solar devices are designed and simulated using industry-standard process and device simulators. The devices under consideration are constructed using the Athena process simulator using deposit, ion implantation, etch, and diffusion statements. The collective impact of the process parameters, namely, ion implantation dose (1 × 10 14 cm −2 to 5 × 10 15 cm −2 ) and energy (10 keV to 30 keV) at a constant diffusion temperature and time of 950 °C and 30 min on the total saturation current density ( j o ), series resistance ( R s ) and PV parameters have been investigated to optimize the emitter region performance. Furthermore, parametric optimization of the bulk thickness ( T bulk ) of the boron-doped crystalline silicon (c-Si) wafer, carrier lifetime ( τ carrier ) and length of a half pyramid (LoHpyramid ) has been carried out to improve the PCE. The optimized PERC device with a dose of 7.5 × 10 15 cm −2, energy of 30 keV, T bulk of 150 μm, τ carrier of 2 ms and LoHpyramid of 4 μm yielded a short-circuit current density ( J SC ) of 40.8 mA cm −2, open-circuit voltage ( V OC ) of 686 mV, fill factor (FF) of 81.54% and PCE of 22.8% along with a j o of 101 fA cm −2 and R s of 578 mΩ cm 2 . A detailed comparison of the simulated efficiency with published experimental work has been made, followed by loss analysis relative to the Auger limit efficiency of 29.4%. The reported device may open a window for further expansion of the PERC solar cell for higher efficiencies.