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HARVARD Citation
Ma, Y. et al. (2021). Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD. Journal of physics. p. . [Online].
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Ma, Y. et al. (2021). Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD. Journal of physics. p. . [Online].