Tuning the electrical performance of solution-processed In2O3TFTs by low-temperature with HfO2-PVP hybrid dielectric. (March 2021)

• Record Type: Journal Article
• Authors: Rao, M.G. Syamala; Meza-Arroyo, J.; Reddy, K. Chandra Sekhar; Murthy, Lakshmi N.S.; de Urquijo-Ventura, M.S.; Garibay-Martínez, F.; Hsu, Julia W.P; Ramirez-Bon, R.
• Is Part Of: Materials today communications. Volume 26(2021)
• Publication Date: 2021-03
• Subjects: HfO2-PVP -- Hybrid dielectric -- Low-temperature -- Solution process -- In2O3 TFT; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2021.102120
• Languages: English
• ISSNs: 2352-4928

Abstract

Graphical abstract: Highlights: The HfO2 -PVP hybrid thin films deposited by low-temperature sol-gel method. The HfO2 -PVP thin films investigated for low-temperature solution-processed In2 O3 thin film transistor (TFT) applications. Tuning the electrical parameters of In2 O3 TFTs by adjusting the In2 O3 processing temperature. Abstract: Here in, we investigated the solution-processed and hysteresis-free indium oxide (In2 O3 ) thin-film transistors (TFTs) fabricated with hafnium oxide-poly(vinyl)phenol (HfO2 -PVP) hybrid thin film as gate dielectric by a low temperature sol-gel method. The hybrid dielectric thin film exhibits unique dielectric properties of a low leakage current density of 1.2 × 10 −8 A/cm 2, gate areal capacitance of 44.4 nF/cm 2 and a dielectric constant (k) of 6.5 at 1 kHz. In addition, the hybrid films show a high-quality homogeneous and pin-hole free surface with a low surface roughness (Rq ) of 0.75-nm and display a low surface energy of 36.7 mJ/m 2 with hydrophobic behavior. This dielectric material is then used used in In2 O3 TFTs as the gate insulator. Here, the In2 O3 semiconductor as the channel layer is examined at 200 °C and 230 °C temperatures for TFT characteristics. The final TFT device fabricated at 230 °C showed much improved electrical performance with the mobility (μsat ) of 2.6 cm 2 /V.s, Ion /Ioff ratio of 10 5, subthreshold swing (SS) of 330 mV/dec, threshold voltage (VT ) of 0.1 V at a low operating voltages because of a better interface between dielectric and semiconductor with fewer charge carriers traps. This study could be an effective approach for the next generation of all-solution fabrication of TFTs that could play a vital role in optoelectronics applications.