The effect of graphene and reduced graphene oxide on the resistive switching behavior of La0.7Ba0.3MnO3. (March 2021)

• Record Type: Journal Article
• Authors: Kumari, Karuna; Thakur, Ajay D.; Ray, S.J.
• Is Part Of: Materials today communications. Volume 26(2021)
• Publication Date: 2021-03
• Subjects: Non-volatile memory -- Resistive switching -- Oxide electronics -- Perovskite -- Electronics -- Composite; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2021.102040
• Languages: English
• ISSNs: 2352-4928

Abstract

Highlights: We investigated the structural, transport and resistive switching (RS) behaviour of a novel hybrid structure made of La x Ba1− x MnO3 (LCMO) and graphene derivatives. Very stable and robust bipolar RS behaviour was observed with additional tunability obtained through the variation in the impurity concentration in the structure. The presence of a metal to insulator transition is clearly observed with a lowering of the transition temperature on increase in the Gr/rGO content. Both the effects can be attributed to the oxygen vacancy generation and filament formation as confirmed from the X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) measurements. The combined attributes of easy fabrication route, robust switching behaviour and environmental stability of the present system makes it a superior candidate for future non-volatile memory design and oxide electronics. Abstract: Future developments in the non-volatile memory design like resistive random access memory (RRAM) holds the backbone of data-controlled applications. The present study reports the investigation of the resistive switching behaviour of a novel nanocomposite system composed of La0.7 Ba0.3 MnO3 and Graphene (Gr)/reduced graphene oxide (rGO) for memory design. The presence of Gr offers a superior switching behaviour, the microscopic origin of which lies in the formation/breakage of conduction filamentary paths, formed through the presence of oxygen vacancies as supported via X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) measurements. The change in the resistance states can be accounted for the exchange interaction along the Mn 3+ –O 2− –Mn 4+ chain, offering simultaneous control over the resistance states via the electric and magnetic field. The conduction behaviour is dominated by the Fowler-Nordheim tunnelling mechanism. The presence of robust and stable switching behaviour over 1000 cycles, stable ON/OFF ratio, and simple synthesis process indicates the potential of the present material system(s) to be an interesting candidate for future memory design.