Study of robin condition influence on phonon nano-heat conduction using meso-scale method in MOSFET and SOI-MOSFET devices. (March 2021)

• Record Type: Journal Article
• Authors: Zobiri, Oussama; Atia, Abdelmalek; Arıcı, Müslüm
• Is Part Of: Materials today communications. Volume 26(2021)
• Publication Date: 2021-03
• Subjects: Boltzmann transport equation -- MOSFET -- Nanoscale heat conduction -- Robin condition -- SOI-MOSFET -- Temperature jump; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2021.102031
• Languages: English
• ISSNs: 2352-4928

Abstract

Graphical abstract: Highlights: Effect of Robin boundary condition on nanoscale heat transfer of MOSFET and SOI-MOSFET. Temperature profiles are the same for different thermal resistances at 10 ps in MOSFET. Rth −1 = 10 10 W/m² K help to reduce the temperature at source/drain for both transistors. Thermal behavior in the studied devices does not change for Rth −1 = 10 7, 10 8 and 10 9 W/m² K. In the active channel, effect of generated heat is more significant compared to Robin condition. Abstract: Metal oxide semiconductor field effect transistor (MOSFET) is a major element of electronic device circuits due to its ability to control the electrical signal. On the other hand, the size of this device became smaller, reached nanoscale. Several macroscopic theoretical studies have been documented on the importance of the thermal behavior in these nano-transistors. This paper provides a developed approach to study the nano-heat conduction coupled with Robin boundary condition and temperature jump boundary condition in MOSFET and Silicon on Insulator (SOI) MOSFET using the mesoscopic Boltzmann transport equation. The results indicated that there was a positive relationship between the increasing of inverse thermal resistance (Rth −1 ) and the reducing temperature in the source/drain for both devices while the maximal temperature at the interface semiconductor-wall decreases slightly for Rth −1 =10 10 W/m²∙K at t = 30 ps reaching 331.7 K for MOSFET and 338.5 K for SOI-MOSFET. The effect of heat generated in the active channel is more profound than the effect of Robin condition for Rth −1 =10 7, 10 8, and 10 9 W/m²∙K at t = 10 ps. The most obvious findings to emerge from this study is that Robin boundary condition has a slight impact on heat along the channel region at a short time. In addition, this study identified the effect of layer oxide, which stores the heat between the source and the drain.