An insight into polishing slurry for high quality and efficiency polishing of diamond. (October 2022)

• Record Type: Journal Article
• Authors: Yuan, Song; Guo, Xiaoguang; Li, Ming; Jin, Zhuji; Guo, Dongming
• Is Part Of: Tribology international. Volume 174(2022)
• Publication Date: 2022-10
• Subjects: Diamond -- CMP -- Fenton systems -- Remove rate; Tribology -- Periodicals; 621.89
• DOI: 10.1016/j.triboint.2022.107789
• Languages: English
• ISSNs: 0301-679X

Abstract

Abstract: Oxidants occupy a decisive role in the final surface quality and remove rate during chemical mechanical polishing (CMP). As for diamond, it is still a huge challenge to achieve high quality and efficiency removal. Herein, a new polishing slurry is provided based on Fenton reaction. The SEM results show that the snowflake oxide layer appears on the diamond surface after corrosion, and the sub-nanometer morphology of Sa= 0.076 nm, Sq= 0.097 nm, Sz= 3.472 nm and the remove rate of 752 nm/h are obtained after CMP. The CO or C-OH groups adsorbed on the diamond surface is the reason that achieve the high efficiency removal. This study provides a new polishing slurry for the high quality and efficiency CMP of diamond.