Photoluminescence studies of the 640nm center in electron irradiated IIa diamond. Issue 8 (13th September 2020)

• Record Type: Journal Article
• Authors: Zhang, Yufei; Wang, Kaiyue; Chang, Sen; Tian, Yuming; Li, Junlin
• Is Part Of: Spectroscopy letters. Volume 53:Issue 8(2020)
• Page Start: 580
• Page End: 586
• Publication Date: 2020-09-13
• Subjects: Defects -- diamond -- photoluminescence -- spectroscopy; Spectrum analysis -- Periodicals; 543.5
• DOI: 10.1080/00387010.2020.1796713
• Languages: English
• ISSNs: 0038-7010

Abstract

Abstract: In this study, a 640 nm center was observed in electron-irradiated type IIa diamond by low-temperature photoluminescence spectroscopy. The origin of the center was explored by temperature dependence analysis. The optical center was at 639.6 nm and adjacent to the negative nitrogen-vacancy center. According to the calculation of energy difference, the splitting of excited states of the nitrogen-vacancy center was excluded as the origin of the 640 nm center. The lattice contraction and electron-phonon coupling model was employed to fit the temperature dependence of the 640 nm center, with all results indicating that the optical center was interstitial defect-related.