Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights. (5th July 2012)

• Record Type: Journal Article
• Authors: Yu, Sheng-Fu; Chang, Sheng-Po; Chang, Shoou-Jinn; Lin, Ray-Ming; Wu, Hsin-Hung; Hsu, Wen-Ching
• Other Names: Jian Sheng-Rui Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2012(2012)
• Publication Date: 2012-07-05
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2012/346915
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%) μ m at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.