Optical and Electrical Properties of Ag-Doped In2S3 Thin Films Prepared by Thermal Evaporation. (4th August 2014)

• Record Type: Journal Article
• Authors: Lin, Peijie; Lin, Sile; Cheng, Shuying; Ma, Jing; Lai, Yunfeng; Zhou, Haifang; Jia, Hongjie
• Other Names: Wang Hao Academic Editor.
• Is Part Of: Advances in materials science and engineering. Volume 2014(2014)
• Publication Date: 2014-08-04
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2014/370861
• Languages: English
• ISSNs: 1687-8434

Abstract

Abstract : Ag-doped In2 S3 (In2 S3 :Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2 S3 and AgIn5 S8 phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~10 3 to 5 . 478 × 10 - 2 Ω· cm.