Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices. (20th August 2014)

• Record Type: Journal Article
• Authors: Maity, N. P.; Maity, Reshmi; Thapa, R. K.; Baishya, S.
• Other Names: Loi Maria A. Academic Editor.
• Is Part Of: Advances in materials science and engineering. Volume 2014(2014)
• Publication Date: 2014-08-20
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2014/497274
• Languages: English
• ISSNs: 1687-8434

Abstract

Abstract : A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high- k materials ZrO2 and HfO2 has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage ( C-V ) method and also conductance ( G-V ) method. It indicates that, by reducing the effective oxide thickness (EOT), the interface charge densities (D it ) increases linearly. For the same EOT, D it has been found for the materials to be of the order of 10 12 cm −2 eV −1 and it is originated to be in good agreement with published fabrication results at p-type doping level of 1 × 10 17 cm −3 . Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.