Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips. (24th January 2012)

• Record Type: Journal Article
• Authors: Gedamu, Dawit; Paulowicz, Ingo; Jebril, Seid; Kumar Mishra, Yogendra; Adelung, Rainer
• Other Names: Xiong Qihua Academic Editor.
• Is Part Of: Journal of nanotechnology. Volume 2012(2012)
• Publication Date: 2012-01-24
• Subjects: Nanotechnology -- Periodicals; Nanotechnology; Nanotechnology; Periodicals; Periodicals; 620.5
• DOI: 10.1155/2012/325732
• Languages: English
• ISSNs: 1687-9503

Abstract

Abstract : 1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.