Optical and Structural Properties of Silicon Nanocrystals Embedded in SiOx Matrix Obtained by HWCVD. (26th July 2012)

• Record Type: Journal Article
• Authors: Coyopol, A.; García-Salgado, G.; Díaz-Becerril, T.; Juárez, H.; Rosendo, E.; López, R.; Pacio, M.; Luna-López, J. A.; Carrillo-López, J.
• Other Names: Guisbiers Grégory Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2012(2012)
• Publication Date: 2012-07-26
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2012/368268
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : The interest in developing optoelectronic devices integrated in the same silicon chip has motivated the study of Silicon nanocrystals (Si-ncs) embedded in SiO x (nonstoichiometric silicon oxides) films. In this work, Si-ncs in SiO x films were obtained by Hot Wire Chemical Vapor Deposition (HWCVD) at 800, 900, and 1000°C. The vibration modes of SiO x films were determined by FTIR measurements. Additionally, FTIR and EDAX were related to get the proper composition of the films. Micro-Raman studies in the microstructure of SiO x films reveal a transition from amorphous-to-nanocrystalline phase when the growth temperature increases; thus, Si-ncs are detected. Photoluminescence (PL) measurement shows a broad emission from 400 to 1100 nm. This emission was related with both Si-ncs and interfacial defects present in SiO x films. The existence of Si-ncs between 3 and 6 nm was confirmed by HRTEM.