Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3 Bilayers. (28th May 2015)

• Record Type: Journal Article
• Authors: Zhou, Xiaoyu; Luo, Yuan; Li, Aidong; Wu, Di
• Other Names: Li Ying Academic Editor.
• Is Part Of: Advances in materials science and engineering. Volume 2015(2015)
• Publication Date: 2015-05-28
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2015/871825
• Languages: English
• ISSNs: 1687-8434

Abstract

Abstract : Pb(Zr0.52 Ti0.48 )O3 (PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3 substrates buffered with La0.7 Sr0.3 MnO3 (LSMO) electrodes. Amorphous T i O x thin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/T i O x /PZT/LSMO heterostructures are found to vary with T i O x deposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in the T i O x layer.