Eu2P2S6: The First Rare‐Earth Chalcogenophosphate Exhibiting Large Second‐Harmonic Generation Response and High Laser‐Induced Damage Threshold. (4th July 2022)

• Record Type: Journal Article
• Authors: Huang, Xiao; Yang, Si‐Han; Li, Xiao‐Hui; Liu, Wenlong; Guo, Sheng‐Ping
• Is Part Of: Angewandte Chemie. Volume 134:Number 32(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-07-04
• Subjects: Chalcogenophosphate -- Crystal Structure -- Europium -- Laser-Induced Damage Threshold -- Nonlinear Optics; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.202206791
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: Metal chalcogenophosphates are receiving increasing interest, specifically as promising infrared nonlinear optical (NLO) candidates. Here, a rare‐earth chalcogenophosphate Eu2 P2 S6 crystallizing in the monoclinic noncentrosymmetric space group Pn was synthesized using a high‐temperature solid‐state method. Its structure features isolated [P2 S6 ] 4− dimer, and two types of EuS8 bicapped triangular prisms. Eu2 P2 S6 exhibits a phase‐matchable second‐harmonic generation (SHG) response ≈0.9×AgGaS2 @2.1 μ m, and high laser‐induced damage threshold of 3.4×AgGaS2, representing the first rare‐earth NLO chalcogenophosphate. The theoretical calculation result suggests that the SHG response is ascribed to the synergetic contribution of [P2 S6 ] 4− dimers and EuS8 bicapped triangular prisms. This work provides not only a promising high‐performance infrared NLO material, but also opens the avenue for exploring rare‐earth chalcogenophosphates as potential IR NLO materials. Abstract : Eu2 P2 S6 exhibits excellent NLO properties, including a phase‐matchable second‐harmonic generation (SHG) response ≈0.9×AgGaS2 @2.1 μ m, and a high laser‐induced damage threshold of 3.4×AgGaS2 . Eu2 P2 S6 is the first NLO‐active rare‐earth‐based chalcogenophosphate.