Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Issue 21 (20th October 2017)

• Record Type: Journal Article
• Authors: Wellmann, Peter J.
• Is Part Of: Zeitschrift für anorganische und allgemeine Chemie. Volume 643:Issue 21(2017)
• Page Start: 1312
• Page End: 1322
• Publication Date: 2017-10-20
• Subjects: Silicon carbide -- Gallium nitride -- Gallium oxide -- Diamond -- Energy applications; Chemistry, Inorganic -- Periodicals; Chemistry -- Periodicals; 540
• DOI: 10.1002/zaac.201700270
• Languages: English
• ISSNs: 0044-2313

Abstract

Abstract : Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. Abstract :