Cite
HARVARD Citation
Li, H. et al. (2020). Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si. Journal of modern optics. 67 (12), pp. 1120-1127. [Online].
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Li, H. et al. (2020). Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si. Journal of modern optics. 67 (12), pp. 1120-1127. [Online].