Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient. (1st January 2019)

• Record Type: Journal Article
• Authors: Sudo, Haruo; Nakamura, Kozo; Maeda, Susumu; Okamura, Hideyuki; Izunome, Koji; Sueoka, Koji
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 1(2019)
• Page Start: P35
• Page End: P40
• Publication Date: 2019-01-01
• Subjects: Semiconductors - Silicon -- oxygen precipitation -- point defect -- rapid thermal processing; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0121901jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : To clarify the point defect reaction in silicon wafers under rapid thermal processing (RTP) at more than 1300°C using an oxidation ambient, the vacancy ( V ) concentration induced in the wafers by RTP was investigated at various oxygen partial pressures. The V concentration was estimated by evaluating the density of oxygen precipitates after thermal treatment. The degree of supersaturation of interstitial silicon ( I ) was determined using the estimated V concentration, resulting in the equation ( CI − CI eq )/ CI eq = A ( T )( dXO / dt ) 0.4 . Here, ( CI − CI eq )/ CI eq denotes the supersaturation of I, A ( T ) denotes a coefficient depending on temperature T, and dXO / dt denotes the growth rate of the oxide film. Furthermore, the same relationship was confirmed for the oxidation-enhanced diffusion (OED) of dopants (900–1150°C) and oxidation-induced stacking fault (OSF) growth (1100–1240°C). As the Arrhenius plots of A ( T ) for RTP, OED, and OSF can be represented by a single line, it was determined that A ( T ) = 1.84 × 10 −9 exp(2.51 eV/ kB T ) (h/μm) 0.4 in the range 900–1350°C.