Cite
HARVARD Citation
Lin, W. et al. (6019). Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. ECS journal of solid state science and technology. pp. Q123-Q125. [Online].
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Lin, W. et al. (6019). Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. ECS journal of solid state science and technology. pp. Q123-Q125. [Online].