(Invited)Development of Plasma Atomic Layer Etching in Close-to-Conventional Etch Tools. (9th April 2018)

• Record Type: Journal Article
• Authors: Cooke, Mike; Goodyear, Andy
• Is Part Of: ECS transactions. Volume 85:Number 6(2018)
• Page Start: 71
• Page End: 76
• Publication Date: 2018-04-09
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08506.0071ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Plasma-based atomic layer etching is a cyclical etching process of gas dosing and ion bombardment that removes material layer by layer, and has the potential to remove single atomic layers with low damage. We consider how a conventional plasma etcher can be modified to perform this style of recipe and give results for Si and GaN/AlGaN. The need for precise control of ion bombardment energy and gas dose is highlighted, requiring specialized hardware.