A Study of Electrical and Optical Properties of Boron-Doped Amorphous Silicon Deposited by RF-PECVD with Different B2H6/H2 Flow Rates. (26th April 2016)

• Record Type: Journal Article
• Authors: Dushaq, Ghada; El-Atab, Nazek; Rasras, Mahmoud; Nayfeh, Ammar
• Is Part Of: ECS transactions. Volume 72:Number 2(2016)
• Page Start: 301
• Page End: 304
• Publication Date: 2016-04-26
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07202.0301ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The inherently disordered nature of amorphous silicon plays a major role in determining their fundamental characteristic. The electrical and optical properties of B- doped hydrogentated amorphous silicon (a-Si:H) thin films deposited using RF-PECVD have been studied. The diborane and hydrogen flow rates are changed during the film deposition. The incorporation of B-dopants and hydrogen on the a-Si band gap, resistivity and index of refraction are carried out using UV/VIS/INR spectrophotometer, hall measurements and variable angle ellipsometry, respectively. The findings of the present work explain the causal relationship between the atomic structures, the chemical environment of amorphous silicon, and the growth condition in changing the electrical and optical characteristic of a-Si:H. Furthermore, by understanding the structural hole trapping defects and optimizing the growth condition a high performance a-Si based devices can be achieved.