High Gain β-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier Multiplication Process. (1st January 2018)

• Record Type: Journal Article
• Authors: Oh, Sooyeoun; Kim, Hyoung Woo; Kim, Jihyun
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 11(2018)
• Page Start: Q196
• Page End: Q200
• Publication Date: 2018-01-01
• Subjects: Optoelectronics -- Semiconductors; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0151811jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : β-Ga2 O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline β-Ga2 O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our β-Ga2 O3 solar-blind PD was ∼3.78 × 10 3 under the multiplication mode at the reverse bias of −60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 × 10 3 cm −1 ). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of ∼10 3 and external quantum efficiency of ∼4 × 10 3 %. High gain via carrier multiplication process in a β-Ga2 O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors.