Cite
HARVARD Citation
Ku, B. et al. (2022). Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film. Nanotechnology. p. . [Online].
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Ku, B. et al. (2022). Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film. Nanotechnology. p. . [Online].