Electrical Characteristics of Vertical Ni/β-Ga2O3 Schottky Barrier Diodes at High Temperatures. (1st January 2017)

• Record Type: Journal Article
• Authors: Oh, Sooyeoun; Yang, Gwangseok; Kim, Jihyun
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 2(2017)
• Page Start: Q3022
• Page End: Q3025
• Publication Date: 2017-01-01
• Subjects: Gallium oxide -- Schottky barrier diodes -- wide bangap semiconductors; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0041702jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Vertical geometry β-Ga2 O3 Schottky barrier diodes (SBDs) were fabricated and the rectifying forward and reverse current-voltage characteristics were demonstrated at elevated temperatures for a freestanding β-Ga2 O3 material with an ultra-wide bandgap of ∼4.9 eV. The breakdown voltage of the fabricated β-Ga2 O3 SBDs with a punch-through configuration was ∼210 V without the edge-termination method. The electrical field and potential distributions were numerically simulated with a finite element method. The on-resistance was 2582 Ω·cm 2 at 25°C, and decreased to 0.043 Ω·cm 2 at 225°C. The figure-of-merit ( V BR 2 / R on ) was approximately 17.1 W·cm −2 . The temperature-dependent Schottky barrier height and ideality factor were also determined. The developed β-Ga2 O3 SBDs with the punch-through structure exhibit great potential for high power and high temperature applications.