Synthesis of ALD Tungsten Trioxide Thin Films from W(CO)6 and H2O Precursors. (10th September 2015)

• Record Type: Journal Article
• Authors: Zhang, Kai; McCleese, Christopher; Lin, Pengtao; Chen, Xin; Morales, Monica; Cao, Wei; Seo, Felix J.; Burda, Clemens; Baumgart, Helmut
• Is Part Of: ECS transactions. Volume 69:Number 7(2015)
• Page Start: 199
• Page End: 209
• Publication Date: 2015-09-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06907.0199ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Tungsten oxide (WO3) was successfully deposited by atomic layer deposition (ALD) usingtungsten hexacarbonyl [W(CO)6] and DI water [H2O]. A saturated growth rate is of 0.2 Å perALD cycle was determined at a growth temperature of 300 °C. The as-deposited ALD WO3 filmswere found to be amorphous, which was corroborated by X-ray diffraction. Post-depositionthermal annealing at an elevated temperature transformed the WO3 phase to a monoclinic crystalstructure. The optical measurement confirmed that the ALD WO3 thin film possessed a band-gapof ~ 3.28 eV.