Cite
HARVARD Citation
Fares, C. et al. (6019). Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. ECS journal of solid state science and technology. pp. P351-P356. [Online].
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Fares, C. et al. (6019). Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65. ECS journal of solid state science and technology. pp. P351-P356. [Online].