Cite
HARVARD Citation
Hsu, W. et al. (2020). Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant. ECS journal of solid state science and technology. p. . [Online].
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Hsu, W. et al. (2020). Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant. ECS journal of solid state science and technology. p. . [Online].