Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium. (1st January 2016)

• Record Type: Journal Article
• Authors: Filippone, Bruno; Donaldson, Conor; Shayesteh, Maryam; O'Connell, Dan; Huet, Karim; Toqué-Tresonne, Ines; Crupi, Felice; Duffy, Ray
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 4(2016)
• Page Start: P3013
• Page End: P3017
• Publication Date: 2016-01-01
• Subjects: carrier lifetimes -- diodes -- Germanium -- laser anneal -- rapid thermal anneal; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0031604jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this work the authors examine the influence of the annealing energy density on carrier lifetime of n + /p Ge diodes processed by laser thermal annealing (LTA) and rapid thermal annealing (RTA). Current-voltage and capacitance-voltage measurements have been performed, and subsequently the reverse current and capacitance were separated into bulk and peripheral components to extract carrier lifetime: this allows the estimation of the bandgap position of the generation-recombination centres. The results indicate that the generation lifetime increases with increasing laser anneal energy density, coinciding with better crystal quality.