Fabrication of p-Type La: Fe2O3 as Photocathode Via Atomic Layer Deposition. (16th August 2016)

• Record Type: Journal Article
• Authors: Peng, Qi; Du, Chun; Wen, Yanwei; Shan, Bin; Chen, Rong
• Is Part Of: ECS transactions. Volume 75:Number 6(2016)
• Page Start: 103
• Page End: 110
• Publication Date: 2016-08-16
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07506.0103ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : P -type La: Fe2 O3 and the n - p junction of Fe2 O3 /La: Fe2 O3 have been fabricated by ALD technique for its excellent conformability and controllable film growth with low defect densities. La: Fe2 O3 film is demonstrated with p -type characteristics by Mott−Schottky plots and the hole concentration is calculated ~ 1.97 × 10 15 cm -3 . It also obtains a cathodic photocurrent ~28 μA/cm 2 at -0.8 V vs. Ag/AgCl. When forming the n - p junction of Fe2 O3 /La: Fe2 O3, it is found that the onset potentialexhibits a negative shift of ~150 mV and the photocurrent densities increases from 0.62 mA/cm 2 to 1.31 mA/cm 2 at 0.5 V vs. Ag/AgCl. Generally, the incident photon-to-current conversion efficiency (IPCE) of Fe2 O3 /La: Fe2 O3 n-p junction reaches ~4.47% at 400 nm. Our results imply that it is desirable to tune the energy mismatch between water splitting potentials and the band edges of Fe2 O3 by a facile surface modification by forming a solid n - p junction.