Enhanced Photoelectrochemical Cathodic Protection Performance of the Secondary Reduced Graphene Oxide Modified Graphitic Carbon Nitride. Issue 13 (1st January 2017)

• Record Type: Journal Article
• Authors: Jing, Jiangping; Sun, Mengmeng; Chen, Zhuoyuan; Li, Jiarun; Xu, Fengling; Xu, Likun
• Is Part Of: Journal of the Electrochemical Society. Volume 164:Issue 13(2017)
• Page Start: C822
• Page End: C830
• Publication Date: 2017-01-01
• Subjects: band structure alignment -- photoelectrochemical cathodic protection -- R-rGO-C3N4; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.1481713jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : Graphitic carbon nitride (g-C3 N4 ) is a promising material in the area of photoelectrochemical (PEC) cathodic protection. However, the fast secondary recombination of photogenerated charge carriers and the amphoteric property of g-C3 N4 restrict its further application. In this work, the secondary reduced graphene oxide modified g-C3 N4 (R-rGO-C3 N4 ) was prepared by a thermal polycondensation method and subsequently secondary reduction process. The presence of reduced graphene oxide (rGO) and the increased reduction degree of rGO were proved by the X-ray photoelectron spectroscopy and UV/Vis diffuse reflectance spectroscopy. The rGO modification enhanced the electrical conductivity of g-C3 N4, promoting the transfer and separation of the photogenerated charge carriers. It adjusted the band structure of g-C3 N4 toward more negative direction, making it show stronger "n-type" semiconductor property. The properties were further improved after the secondary reduction of the rGO. These help to increase the PEC properties of g-C3 N4, which makes a step toward the practical application of g-C3 N4 .