Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer. (1st January 2018)

• Record Type: Journal Article
• Authors: Tadjer, Marko J.
• Is Part Of: Electrochemical Society Interface. Volume 27:Number 4(2018)
• Page Start: 49
• Page End: 52
• Publication Date: 2018-01-01
• Subjects: power electronics -- Gallium Oxide -- bandgap -- substrate -- thermal conductivity -- semiconductor
• DOI: 10.1149/2.F05184if
• Languages: English
• ISSNs: 1064-8208

Abstract

Abstract : The case for monoclinic Gallium Oxide (β-Ga2 O3 ) as a viable material for next-generation power electronics is presented from a wide-bandgap semiconductor device engineering point of view. The combination of an ultra-wide bandgap, high critical field, controlled doping, extremely high quality substrates, binary and ternary epitaxial layers and structures, as well as the ability to grow cheap, large area substrates from the melt have compelled a number of scientists worldwide to explore Ga2 O3 . Overcoming its disadvantages, such as the difficulty in realizing p-type conductivity and its extremely low conductivity, as well as competition from technologies in the marketplace, such as GaN and SiC power devices, will determine whether Ga2 O3 becomes technologically relevant for power electronics.