Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 Substrates. (13th April 2015)

• Record Type: Journal Article
• Authors: Imai, Ryosuke; Kosemura, Daisuke; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 66:Number 1(2015)
• Page Start: 119
• Page End: 126
• Publication Date: 2015-04-13
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06601.0119ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : An E1 (TO) branch was excited even under the backscattering geometry from c -plane GaN layers on Si and Al2 O3 substrates by oil-immersion Raman spectroscopy. The frequencies of the excited E1 (TO) were lower than those obtained in the dry Raman measurements. This behavior was able to be understood as the result of the mixing of optical phonon frequencies.