Erratum: Influence of High Dose Gamma Irradiation on Electrical Characteristics of Si Photo Detectors [ECS J. Solid State Sci. Technol., 6, Q132 (2017)]. (1st January 2017)

Record Type:: Journal Article
Title:: Erratum: Influence of High Dose Gamma Irradiation on Electrical Characteristics of Si Photo Detectors [ECS J. Solid State Sci. Technol., 6, Q132 (2017)]. (1st January 2017)
Main Title:: Erratum: Influence of High Dose Gamma Irradiation on Electrical Characteristics of Si Photo Detectors [ECS J. Solid State Sci. Technol., 6, Q132 (2017)]
Authors:: Kumar, M. Vinay
Kumar, Santosh
Cheng, Chun
Asokan, K.
Kumar, Ashish
Shobha, V.
Karanth, S. P.
Krishnaveni, S.
Abstract:
Is Part Of:: ECS journal of solid state science and technology. Volume 6:Number 10(2017)
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 10(2017)
Issue Display:: Volume 6, Issue 10 (2017)
Year:: 2017
Volume:: 6
Issue:: 10
Issue Sort Value:: 2017-0006-0010-0000
Page Start:: X3
Page End:: X3
Publication Date:: 2017-01-01
Subjects:: Erratum
Solid state chemistry -- Periodicals
Electronics -- Materials -- Periodicals
Electrochemistry -- Periodicals
541.0421
Journal URLs:: https://iopscience.iop.org/journal/2162-8777 ↗
http://www.electrochem.org/ ↗
DOI:: 10.1149/2.0181710jss ↗
Languages:: English
ISSNs:: 2162-8777
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 22768.xml