Cite
HARVARD Citation
Han, B. et al. (2019). Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application. ECS journal of solid state science and technology. pp. P298-P302. [Online].
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Han, B. et al. (2019). Preparation of Ge-Sb-Te Thin Films by Tellurization of Ge-Sb Thin Film for Phase-Change Random-Access Memory Application. ECS journal of solid state science and technology. pp. P298-P302. [Online].