Embedded Al-Doped ZnO Grating Strips underneath MgNiO Photoconductor-Structured Ultraviolet Photodetectors. (1st January 2018)

• Record Type: Journal Article
• Authors: Lee, Hsin-Ying; Lin, Chi-Wen; Lee, Ching-Ting
• Is Part Of: ECS journal of solid state science and technology. Volume 7:Number 9(2018)
• Page Start: Q169
• Page End: Q170
• Publication Date: 2018-01-01
• Subjects: Al-doped ZnO grating strips -- MgNiO ultraviolet photodetector -- photoconductor structured; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0241809jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : By embedding high-conductive Al-doped ZnO grating strips underneath the MgNiO absorption layer, the photoconductor-structured ultraviolet photodetectors (UVPDs) were fabricated. When the MgNiO absorption layer was annealed at 500°C for 1 hour, the optical bandgap energy was 3.87 eV which corresponded to the cutoff wavelength of 320 nm of the fabricated UVPDs. The dark current of the UVPDs without and with Al-doped ZnO grating strips revealed a similar value of 0.9 μA and 1 μA, respectively. However, compared with the photoresponsivity of 3.0 A/W of the UVPDs without Al-doped ZnO grating strips, the photoresponsivity of the UVPDs with Al-doped ZnO grating strips was improved to 20.1 A/W at the wavelength of 320 nm.