(Invited) Challenges the UWBG Semiconductors AlGaN, Diamond, and Ga2O3 Must Master to Compete with SiC and GaN HPE Devices. (17th August 2017)

• Record Type: Journal Article
• Authors: Jones, Kenneth A.; Tompkins, R. P.; Graziano, M. B.; Derenge, M. A.
• Is Part Of: ECS transactions. Volume 80:Number 7(2017)
• Page Start: 3
• Page End: 16
• Publication Date: 2017-08-17
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08007.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Power diodes and transistors fabricated from the ultra-wide bandgap (UWBG) semiconductors, AlGaN, Ga2 O3, and diamond using state-of-the-art materials are compared with those fabricated from GaN and SiC. Parameters used in the operation of the devices are discussed, methods for improving them are described, and the ability to, and importance of, improving them are assessed. Equations for the resistance of different elements of the device are also provided so one can assess their importance and make meaningful comparisons between the different types of transistors.