Cite
HARVARD Citation
Polyakov, A. et al. (2019). Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors. ECS journal of solid state science and technology. pp. Q3013-Q3018. [Online].
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Polyakov, A. et al. (2019). Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors. ECS journal of solid state science and technology. pp. Q3013-Q3018. [Online].