Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology. Issue 1 (1st January 2019)

• Record Type: Journal Article
• Authors: Menk, L. A.; Josell, D.; Moffat, T. P.; Baca, E.; Blain, M. G.; Smith, A.; Dominguez, J.; McClain, J.; Yeh, P. D.; Hollowell, A. E.
• Is Part Of: Journal of the Electrochemical Society. Volume 166:Issue 1(2019)
• Page Start: D3066
• Page End: D3071
• Publication Date: 2019-01-01
• Subjects: MEMs -- Microelectronics - Semiconductor Processing -- Semiconductors - Silicon -- 3D Interconnect -- Through Silicon Via -- TSV; Electrochemistry -- Periodicals; 541.3705
• DOI: 10.1149/2.0091901jes
• Languages: English
• ISSNs: 0013-4651

Abstract

Abstract : An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO4 – 0.25 mol/L CH3 SO3 H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.