Simultaneously High Thermal Stability and Low Power Based on Ti-Doped Ge2Sb2Te5 Thin Films. (1st January 2017)

• Record Type: Journal Article
• Authors: Hu, Yifeng; Zhang, Rui; Lai, Tianshu; Zhu, Xiaoqin; Zou, Hua; Song, Zhitang
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 12(2017)
• Page Start: P866
• Page End: P869
• Publication Date: 2017-01-01
• Subjects: pow consumption -- thermal stability -- Ti-doping; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0121712jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Compared with Ge2 Sb2 Te5, Ti-doped Ge2 Sb2 Te5 has better amorphous thermal stability (activation energy of 4.65 eV) and data retention (165°C for 10-year). The crystallization is restrained by the added Ti atoms with smaller grains. A faster SET/RESET switching speed (12 ns) and a lower RESET voltage (2.67 V) are obtained. The results indicate that Ti-doped Ge2 Sb2 Te5 material has the excellent potential for high-density application in phase change memory.