(Invited) Ultrawide Bandgap β-Ga2O3 Thin Films: Growths, Properties and Devices. (17th August 2017)

• Record Type: Journal Article
• Authors: Rafique, Subrina; Han, Lu; Zhao, Hongping
• Is Part Of: ECS transactions. Volume 80:Number 7(2017)
• Page Start: 203
• Page End: 216
• Publication Date: 2017-08-17
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08007.0203ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Ultrawide bandgap β-Ga2 O3 represents an emerging semiconducting material for high power electronics and short wavelength optoelectronics applications. It possesses a wide band gap of 4.5-4.9 eV, and excellent chemical and thermal stability up to 1400 o C, which opens up new opportunities for various device applications. This paper reviews recent progresses on β-Ga2 O3 thin film growths, properties and device demonstrations. Methods that have been demonstrated to enable high quality β-Ga2 O3 thin film growth with controllable doping are discussed. Device applications of monoclinic β-Ga2 O3 are also covered. Finally, a conclusion and future perspectives of the research in the area of this important semiconducting material will be given.