GaN Schottky Barrier Diodes on Free-Standing GaN Wafer. (1st January 2017)

• Record Type: Journal Article
• Authors: Liu, Xinke; Gu, Hong; Li, Kuilong; Wang, Jianfeng; Wang, Lei; Kuo, Hao-Chung; Liu, Wenjun; Chen, Lin; Fang, Jianping; Liu, Meihua; Lin, Xinnan; Xu, Ke; Ao, Jin-Ping
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 10(2017)
• Page Start: N216
• Page End: N220
• Publication Date: 2017-01-01
• Subjects: free-standing GaN -- Vertical GaN SBDs; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0261710jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper, vertical GaN Schottky barrier diodes (SBDs) have been demonstrated on the freestanding (FS) GaN wafer. Room temperature photoluminescence shows no emission of yellow luminescence, due to the eliminating the point defects (ON, VGa ). The average full width half maximum (FWHM) value of ω -scans for (0001) and (10–12) planes is 53 and 103 arcsec, respectively, as measured by high resolution X-ray diffraction; the average dislocation density at the top surface measured by cathodoluminescence is ∼7.7 × 10 5 cm −2 . The vertical GaN SBDs fabricated on this FS-GaN wafer achieve a breakdown voltage of 1200 V, an on-state resistance Ron of 7 mΩ·cm 2, and a current on/off ratio Ion / Ioff of ∼2.3 × 10 10, which leads to a power device figure-of-merit VBR 2 / Ron of 2.1 × 10 8 V 2 Ω −1 cm −2 . TCAD simulation was employed to study the device breakdown mechanism, and shows the breakdown mechanism is due to the impact ionization at the edge of the Schottky gate.