Cite
HARVARD Citation
Nipoti, R. et al. (2019). 1300°C Annealing of 1 × 1020 cm−3 Al+ Ion Implanted 3C-SiC/Si. ECS journal of solid state science and technology. pp. P480-P487. [Online].
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Nipoti, R. et al. (2019). 1300°C Annealing of 1 × 1020 cm−3 Al+ Ion Implanted 3C-SiC/Si. ECS journal of solid state science and technology. pp. P480-P487. [Online].