Cite
HARVARD Citation
Murota, J. et al. (2018). Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth. ECS journal of solid state science and technology. pp. P305-P310. [Online].
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Murota, J. et al. (2018). Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth. ECS journal of solid state science and technology. pp. P305-P310. [Online].