Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection. (1st January 2016)

• Record Type: Journal Article
• Authors: Xiao, Jian-Feng; Hsu, Chen-Pin; Sarangadharan, Indu; Lee, Geng-Yen; Chyi, Jen-Inn; Wang, Yu-Lin
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 5(2016)
• Page Start: Q137
• Page End: Q139
• Publication Date: 2016-01-01
• Subjects: Gas sensor -- Hydrogen sulfide -- Pt/GaN -- Schottky diode; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0311605jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Pt/GaN Schottky diodes were fabricated for detecting hydrogen sulfide at 200°C. Ga-face GaN was grown on c-plane sapphire substrate by a metal-organic chemical vapor deposition (MOCVD) system. Hydrogen sulfide was mixed with nitrogen and detected from 0.1∼10 ppm with the Pt/GaN Schottky diodes. Hydrogen sulfide caused the current increase in both forward and reversed bias of the Schottky diode. Real-time detection of the hydrogen sulfide was conducted at a forward bias 1.18 V in nitrogen ambient. The sensors show good linear dependence of the current change at forward bias versus the H2 S gas concentration. The sensitivity in the two ranges from 0.1∼1 ppm and 1∼10 ppm of hydrogen sulfide, are 14.62 and 5.844 μA/ppm, respectively. The detection limit of the sensor is around 0.2 ppm of hydrogen sulfide at the forward bias at 200°C. The results show that the Pt/GaN Schottky diodes are promising for low cost and high sensitivity hydrogen sulfide detection.