Improvement in analog/RF performances of SOI TFET using dielectric pocket. Issue 11 (1st November 2020)

• Record Type: Journal Article
• Authors: Pandey, C. K.; Dash, D.; Chaudhury, S.
• Is Part Of: International journal of electronics. Volume 107:Issue 11(2020)
• Page Start: 1844
• Page End: 1860
• Publication Date: 2020-11-01
• Subjects: Ambipolar current -- analog performance -- cut-off frequency -- radio-frequency parameters -- tunnel FET (TFET); Electronics -- Periodicals; Electronic control -- Periodicals; 621.381
• DOI: 10.1080/00207217.2020.1756439
• Languages: English
• ISSNs: 0020-7217

Abstract

ABSTRACT: In this manuscript, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET is investigated. The inclusion of a dielectric pocket to SOI-TFET has been found to have great potential in eliminating the ambipolarity when Tunnel FET is biased at a higher negative gate voltage. With 2-D numerical simulations, it is demonstrated that inclusion of a dielectric pocket on partially scaled drain region improves the analog/RF performances of SOI-TFET such as gate-to-drain capacitance, output resistance, gain-bandwidth product and cut-off frequency. Furthermore, it is shown that a high- k dielectric pocket (HfO2 ) provides more reduction in ambipolar conduction compared to a low- k dielectric pocket (SiO2 ). But, analog/RF performance parameters are observed superior in SOI-TFET with low- k dielectric pocket compared to conventional and high- k dielectric pocket SOI-TFET. Additionally, to demonstrate the advantage of using a dielectric pocket to SOI-TFET in circuit applications, we compare the transient response of conventional SOI-TFET with low and high- k dielectric pocket SOI TFET.